bd433/435/437 ? npn epit axial silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com bd433/435/437 rev. b0 1 july 2011 bd433/435/437 npn epitaxial silicon transistor features ? medium power linear and switching applications ? complement to bd434, bd436 and bd438 respectively ordering information * the suffix "s" of fsid denotes to126 package. absolute maximum ratings t a = 25c unless otherwise noted part number marking packag e packing method remarks bd433s bd433 to-126 bulk bd435s bd435 to-126 bulk bd435stu bd435 to-126 rail bd437s bd437 to-126 bulk symbol parameter value units v cbo collector-base voltage : bd433 : bd435 : bd437 22 32 45 v v v v ces collector-emitter voltage : bd433 : bd435 : bd437 22 32 45 v v v v ceo collector-emitter voltage : bd433 : bd435 : bd437 22 32 45 v v v v ebo emitter-base voltage 5 v i c collector current (dc) 4 a i cp *collector current (pulse) 7 a i b base current 1 a p c collector dissipation (t c = 25 c) 36 w t j junction temperature 150 c t stg storage temperature - 65 to 150 c 1 to-126 1. emitter 2.collector 3.base
bd433/435/437 ? npn epit axial silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com bd433/435/437 rev. b0 2 electrical characteristics t a = 25c unless otherwise noted * pulse test: pw 300 s, duty cycle 1.5% pulsed symbol parameter test condition min. typ. max. units v ceo (sus) collector-emitter sustaining voltage : bd433 : bd435 : bd437 i c = 100ma, i b = 0 22 32 45 v v v i cbo collector cut-off current : bd433 : bd435 : bd437 v cb = 22v, i e = 0 v cb = 32v, i e = 0 v cb = 45v, i e = 0 100 100 100 a a a i ceo collector cut-off current : bd433 : bd435 : bd437 v ce = 22v, v be = 0 v ce = 32v, v be = 0 v ce = 45v, v be = 0 100 100 100 a a a i ebo emitter cut-off current v eb = 5v, i c = 0 1 ma h fe * dc current gain : bd433/435 : bd437 : all device : bd433/435 : bd437 v ce = 5v, i c = 10ma v ce = 1v, i c = 500ma v ce = 1v, i c = 2a 40 30 85 50 40 130 130 140 v ce (sat) * collector-emitt er saturation volt- age : bd433 : bd435 : bd437 i c = 2a, i b = 0.2a 0.2 0.2 0.2 0.5 0.5 0.6 v v v v be (on) * base-emitter on voltage : bd433 : bd435 : bd437 v ce = 1v, i c = 2a 1.1 1.1 1.2 v v v f t current gain bandwidth product v ce = 1v, i c = 250ma 3 mhz
bd433/435/437 ? npn epit axial silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com bd433/435/437 rev. b0 3 typical performance characteristics figure 1. dc current gain figure 2. collector-emitter sa turation voltage figure 3. base-emitter on voltage f igure 4. collector-base capacitance figure 5. safe operating area figure 6. power derating 0.01 0.1 1 10 100 1 10 100 1000 v ce = 1v h fe , dc current gain i c [a], collector current 0.1 1 10 0.01 0.1 1 i c = 10 i b v ce (sat)[v], saturation voltage i c [a], collector current 0.0 0.3 0.5 0.8 1.0 1.3 1.5 1.8 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ce = 1v i c [a], collector current v be [v], base-emitter voltage 0.1 1 10 100 1000 1 10 100 1000 c cbo (pf), collector base capacitance v cb [v], collector base voltage 1 10 100 0.1 1 10 10 s 100 s 1 m s 1 0 m s bd433 i c max. (pulsed) bd437 bd435 d c i c max. (continuous) i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 200 0 6 12 18 24 30 36 42 48 p c [w], power dissipation t c [ o c], case temperature
bd433/435/437 ? npn epit axial silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com bd433/435/437 rev. b0 4 physical dimension 1 2 7 ( 6 $ 7 + , 6 3 $ & . $ * ( ' 2 ( 6 1 2 7 & 2 0 3 / < 7 2 $ 1 < & 8 5 ( 1 7 3 $ & . $ * , 1 * 6 7 $ 1 ' $ 5 ' % $ / / ' , 0 ( 1 6 , 2 1 6 $ 5 ( , 1 0 , / / , 0 ( 7 ( 5 6 & ' , 0 ( 1 6 , 2 1 6 $ 5 ( ( ; & / 8 6 , 9 ( 2 ) % 8 5 5 6 0 2 / ' ) / $ 6 + $ 1 ' 7 , ( % $ 5 ( ; 7 5 8 6 , 2 1 6 ' ) 2 5 7 ( 5 0 , 1 $ / / ( 1 * 7 + 6 ( ( 7 $ % / ( ( ' 5 $ : , 1 * ) , / ( 1 $ 0 ( $ 1 ' 5 ( 9 , 6 , 2 1 0 . 7 7 2 $ $ u h y 0 $ ; ' & 2 ' ( / ( 1 * 7 + ' 7 6 6 7 8 7 6 7 8 1 2 1 ( 3 5 2 ' 8 & 7 , 2 1 7 ( 5 0 , 1 $ / 6 7 ' / ( 1 * 7 + ? ; ; to-126 dimensions in millimeters
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